These form compressive strain fields and tensile strain fields, respectively.
2.
Under excessive tensile strain, the tubes will undergo plastic deformation, which means the deformation is permanent.
3.
Covering the NMOS transistor with a highly stressed silicon nitride layer is another way to create uniaxial tensile strain.
4.
Specifically, PMOS performance is best served by applying compressive strain to the channel, whereas NMOS receives benefit from tensile strain.
5.
In this case, two materials, one in tensile strain, the other in compression strain, will induce substantial bending.
6.
Carbon doping as low as 0.25 % in the N-channel MOSFET source and drain causes uniaxial tensile strain in the channel, increasing electron mobility.
7.
Wang and Li reported an enhancement of the magnetoresistance in 5-to 15-nm-thick Pr0.67Sr0.33MO3 films using out-of-plane tensile strain.
8.
Specifically, the strain fields of dislocations obey similar laws of attraction and repulsion; in order to reduce overall strain, compressive strains are attracted to tensile strains, and vice versa.
9.
The expression of strain energy shows that it is advantageous to apply a high tensile strain to the springs to maximize energy storage since strain energy is proportional to square of the strain.
10.
There is no evidence of tensile strain in any sutures . " Acanthostega " fossil records demonstrate that no strain pattern was exhibited that relate to prey capture by means of suction.
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